| dc.contributor.author | Kumar, Prashant | |
| dc.date.accessioned | 2022-04-20T11:34:01Z | |
| dc.date.available | 2022-04-20T11:34:01Z | |
| dc.date.issued | 2021-11 | |
| dc.identifier.uri | https://shodhganga.inflibnet.ac.in/handle/10603/445068 | |
| dc.description | Vashishath, Munish and Bansal, P.K. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | JC Bose University | en_US |
| dc.subject | Electronics engineering | en_US |
| dc.subject | MOS device | en_US |
| dc.title | Analytical study of MOS devices for leakage reduction in low power circuit | en_US |
| dc.type | Thesis | en_US |
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