Analytical study of MOS devices for leakage reduction in low power circuit

dc.contributor.author	Kumar, Prashant
dc.date.accessioned	2022-04-20T11:34:01Z
dc.date.available	2022-04-20T11:34:01Z
dc.date.issued	2021-11
dc.identifier.uri	http://localhost:8080/xmlui/handle/123456789/100
dc.description	Vashishath, Munish and Bansal, P.K.	en_US
dc.language.iso	en	en_US
dc.publisher	JC Bose University	en_US
dc.subject	Electronics engineering	en_US
dc.subject	MOS device	en_US
dc.title	Analytical study of MOS devices for leakage reduction in low power circuit	en_US
dc.type	Thesis	en_US